Abstract
AbstractBack‐contact silicon solar cells feature high efficiencies, simpler module assembly, and improved aesthetics. The emitter wrap through (EWT) cell structure is particularly attractive for use with industrial processing (e.g., screen‐printed metallization) and common solar‐grade p‐type Si materials. We report development of a high‐efficiency EWT back‐contact cell using p‐type Cz silicon and only industrial processing techniques such as screen‐printed metallizations, diffusions, and PECVD. An efficiency of 19.0% has been achieved with large area (156‐mm pseudo‐square) cells. Detailed characterization and modeling have been performed to understand the optical and electrical losses, and these results were used to generate a roadmap to improve the efficiency to over 20%. Copyright © 2011 John Wiley & Sons, Ltd.
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