Abstract
At very low temperatures (< 80 °C), improved performance indium tin oxide (ITO) thin films with a low resistivity of 4.22 × 10 −4 Ωcm and high transmittance > 90% at 550 nm were developed using the neutral beam-assisted sputtering (NBAS) technique, which included a cyclic inter-treatment process with an Ar neutral beam. Transmission electron microscopy and electron diffraction showed that the neutral particles with hyper-thermal energy was able to enhance the formation of the nano-crystalline phase and activate the dopant without additional heating or plasma damage during ITO thin film deposition.
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