Abstract
The use of 1.35 eV amorphous silicon-germanium (a-SiGe:H) alloy as the second/third intrinsic layer along with 1.85 eV front layer in double/triple tandem solar cells is believed to be the best combination for the maximum power output for multijunction cells. In this study high quality low-band-gap (1.36 eV) a-SiGe:H alloy has been developed by RF glow discharge optimizing the deposition parameters and helium dilution of source gases. It has been observed that the structural, electronic properties and defect densities of alloy films developed under the deposition condition which is the transition from low-discharge-power to high-discharge-power regime, become optimum. In the present case this deposition condition is a combination of chamber pressure 0.8 Torr and RF power 60 mW/cm2. The properties of the alloy films developed under helium dilution improve and defect density decreases with the increase of deposition rate up to 120 Å/min. The 1.36 eV alloy film prepared under this condition has very low defect density ( 3.2×1016 cm-3 eV-1). The analysis of spectral response of Pd/a-SiGe:H Schottky barrier solar cells reveals that the hole transport properties improve due to increase of RF power from 15 to 60 mW/cm2 and also due to increase of growth rate from 51 to 120 Å/min.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
