Abstract
ABSTRACTThe photo FET having a photosensitive insulator layer showed excellent photo-switching properties upon illuminating the gate dielectric layer, because the gate capacitor was rapidly charged up by providing a large amount of photo-generated charges in the dielectric layer to the gate capacitor. In this study, we have tried to give a memory function to the photo FET. Further, we have tried to fabricate flexible photo FETs by using only solution processes in order to utilize the photo FET as flexible photo sensor and photo memory devices. As a result, we have succeeded in observing the memory effect of the photo FET and the photo-switching behavior of the flexible photo FETs
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