Abstract
A method providing more than a tenfold improvement in the precision of exposure field alignment in electron-beam lithography is proposed. The method uses a scanning electron microscope with a standard mechanical positioning system and alignment markers produced by contact photolithography. Bragg–Fresnel lens (1–3–5 orders) with a tenfold decrease in the error of exposure field alignment through the use of mechanical stages are created via this technique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
