Abstract
The recent developments of semiconductor Si, Ge and GaAs blocked impurity band detectors (BIBs), and Si and GaAs homojunction interfacial work-function internal photoemission (HIWIP) far-infrared (FIR) detectors in extending the wavelength coverage and improving the focal plane array (FPA) performance are reviewed. The advantages, current status, and potential limitations of these FIR detectors are also discussed.
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