Abstract
We have carried out an investigation of imaging characteristics and quantum efficiency of far-infrared (FIR) semiconductor imaging devices. The realization of the FIR imaging employs the concept of photon frequency upconversion in GaAs homojunction interfacial work-function internal photoemission (HIWIP) FIR detectors integrated with GaAs∕AlGaAs near-infrared light-emitting diodes (LEDs). Satisfying images have been expected through the analysis of modulation transfer function of the system, where the FIR detector parameters play key roles in the low spatial frequency image contrast, while those of LEDs dominate in the high spatial frequency range. We have examined in detail the dependence of the quantum efficiency on the emitter layer number, thickness, doping concentration, and applied bias of the FIR detectors, as well as the active layer thickness and internal quantum efficiency of the LEDs. The present study has also yielded an optimal structure for the integrated HIWIP-LED FIR imaging devices.
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