Abstract
A higher quality electron beam (EB) mask lithography system is now required in an advanced field aimed at 1 Gbit DRAM chips. For this purpose, photomask accuracies of 0.03 micrometers to 0.02 micrometers are needed, for the feasibility of an EB lithography system with these accuracy levels is discussed. The error sources of a commercial EB lithography system with a variable shaped beam system and step and repeat writing strategy are examined. The development plans to minimize these errors are described and early results, specifically the field stitching error, obtained from these developments are shown. The mean stitching error was +/- 0.023 micrometers and the random stitching error was +/- 0.030 micrometers . From the analysis of error budget, it is shown that a field stitching accuracy level of 0.02 micrometers will be attainable after the completion of above-mentioned development plans.
Published Version
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