Abstract
Development of Combined Diamond-impregnated Lapping Plates
Highlights
Single-crystal silicon carbide (SiC) is a new high-power material that can be used for chip production
Analysis showed that the HRA of the ceramic binder pads was in the range of [12,13,14,15,16,17], which is much lower than that of the resin bound pads, 42–43
It is very clear that there are no holes in the resin between the diamond grains in the resin-bound pads [Figs. 8(a) and 8(b)], whereas the ceramic pads are porous, as shown in Figs. 8(c) and 8(d)
Summary
Single-crystal silicon carbide (SiC) is a new high-power material that can be used for chip production. It has several very important features that make it superior to other materials in many applications. It has outstanding thermal conductivity, high saturated electron drift velocity, high dielectric strength against field collapse, high mechanical strength, and excellent chemical stability. Flattening a wafer of SiC has always been problematic Nowadays, this is usually done with free abrasive slurry against a copper or cast-iron lapping plate. This is usually done with free abrasive slurry against a copper or cast-iron lapping plate This method is not very efficient, takes a long time, and the cost is high. 1) Initial double-side grinding with cast-iron plates and B4C-free abrasive, 2) single-side grinding with a copper plate and 6 μm diamond slurry, and 3) final polishing with a resin-copper combined The usual process is as follows. 1) Initial double-side grinding with cast-iron plates and B4C-free abrasive, 2) single-side grinding with a copper plate and 6 μm diamond slurry, and 3) final polishing with a resin-copper combined
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