Development of cauliflower seedlings due to the increase of silicon in substrate

Abstract

The production of seedlings is an important step in the establishmentof the crop, with repercussions on yield, whose application of Si can improve phytosanitary and performance characteristics.The objective of the study was to analyze the increase of silicon in substrate on the development of seedlings of Brassica oleraceavar. botrytis. The experiment carried out in randomized blocks, with five amounts of silicon (0, 25, 50, 75 and 100 g kg-1of substrate) and four replications. Silicon oxide (98% SiO2) used, mixed with the substrate with subsequent filling of the polyethylene trays (128 cells) and seeding. The trays kept in a greenhouse. At 30 days after sowing, the height of seedlings, number of leaves, fresh weight of leaves and stem, dry weight of leaves, stem and root evaluated. The data subjected to analysis of variance by the F test and regression analysis. Of the variables analyzed, only the dry root mass did not show a significant difference. Quadratic models can represent the variation in components. Seedling height increased with the increase of silicon up to thedoseof 75 g kg-1. Other variables showed increases up to a dose of 50 g kg-1. The increase of silicon in the substrate was efficient in the development of seedlings of Brassica oleraceavar. botrytisin an amount of up to 50 g kg-1of substrate.