Abstract
Sidewall process has been proposed as one of the acceptable self aligned double patterning technologies (SADPT). In this study, carbon rich spin-on sidewall (SoS) materials have been investigated. And the possibility of applying them in novel double patterning process has been explored. This process has some merits in terms of cost reduction and throughput compared with CVD sidewall process. And it is easy to apply this material for conventional litho film stacks. However, how to control critical dimension has been one of the key tasks to be dissolved. And, several issues including etch resistance and solubility must be addressed. Thus, carbon rich polymer having alkali soluble unit and cross-linking unit was chosen for this purpose. The sidewall width is controlled by the cross-link reaction using a concept similar to negative-tone photoresist. The driving force of cross-linking reaction is acid diffusion from the resist. As a result, it was confirmed that SoS pattern was formed and the critical dimension of the sidewall can be controlled by adjusting the amount of acid amplifier. By using SoS materials we successfully converted 1:3 L/S pattern to dense pattern.
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