Abstract
Transmission electron microscopy has been used to confirm that the microtwins in GaAs grown on 4°-off (001) Si by molecular beam epitaxy form preferentially on one of the {111} planes. A Schmid factor analysis of the stresses in the deposit shows that the favored plane is the one on which the resolved shear stress is highest, supporting a deformation twinning model for twin formation in two dimensional growth of GaAs on offcut Si substrates.
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