Development of an ion beam induced luminescence set-up with a temperature controlled target stage and its application

Abstract

To explore the irradiation damage and the ion beam induced luminescence (IBIL) during ion implantation at various temperatures, a MeV ion beam induced luminescence measuring set-up with a temperature controlled target stage (attainable temperature range from 77 K to 873 k) has been established at the GIC4117 Tandem accelerator in Beijing Normal University. On the IBIL spectra of lithium fluoride (LiF) at various temperatures under the 2 MeV H+ irradiation, the significant influences of temperature on luminescence were observed. Several mechanisms influenced by temperature could be the cause of different evolution behaviors under different temperatures, such as the vacancy migration rate, annealing effect and non-radiative recombination. The ‘‘double-exponential’’ model was employed to get the value of the half-brightness radiation fluence F1/2, to get the information about the sensitivity of photon yield to the irradiation damage and recovery.