Abstract
Modifications in the surface local electronic structure by the adsorption of alkali metals and its charge-transfer interaction with excited-state helium atoms have been investigated by metastable deexcitation spectroscopy (MDS) at Cs-adsorbed GaAs(0 0 1)(4×2) surfaces. Energy distributions of electrons ejected by Auger-type decay processes of holes on the incident He* atoms were measured as a function of Cs coverage. At a clean GaAs(0 0 1) surface, He* atoms were deexcited via resonance ionization followed by Auger neutralization (AN), from which the toplayer density of states was extracted. With the adsorption of Cs ( θ<0.25), a new peak relating to the Ga dangling bonds filled by charge transfer from adsorbed Cs appeared by an Auger deexcitation (AD) process. At around θ∼0.5, we observed a development of Cs 6s-induced states at E F. We discuss a local nature in the charge-transfer interaction of the alkali-induced states with the He* atoms at semiconductor surfaces.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
