Abstract
AlGaN and quaternary InAlGaN alloys are attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-emitting diodes (LEDs) or laser diodes (LDs) [1,2]. We demonstrated 222–351 nm DUV LEDs with AlGaN and InAlGaN quantum wells (QWs) fabricated on low threading dislocation density (TDD) AlN buffer on sapphire [1–6].
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