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Abstract
Several new manufacturing techniques in the semiconductor industries increase the demands on the process equipment. Severe environment conditions, such as vacuum, aggressive media and high temperatures, often meet aspired accuracy in the sub-micron range. Outstanding examples for high-tech manufacturing equipment are step- and scan systems for wafer lithography. In particular, next generation lithography (NGL) tools for non-optical lithography techniques face challenges like suitability for high vacuum, low disturbing field emission, and extremely high position accuracy. The following paper presents the design, development, and first evaluation results of a wafer stage for the ion-beam lithography system.
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