Abstract
PbTiO3 and Pb(Zr,Ti)O3, have been applied to various actuators and sensors due to their high piezoelectric and dielectric properties. However, the usage of lead-based materials is prohibited by Restriction of Hazardous Substances. In this study, a new biocompatible MgSiO3 thin film is generated on the Au/SrTiO3(110) substrate, which is determined on basis of our three-scale analyses, by using the radio-frequency magnetron sputtering method. The crystallographic orientation of thin film was measured by using X-ray diffractometer and the displacement-voltage curves were measured by using the ferroelectric character evaluation system, respectively. An optimum condition, which leads to the highest piezoelectric property, is determined through the experimental design algorithm and the analysis of variance table schemes. The peak of MgSiO3(111) crystal was obtained and its intensity increased with the substrate and the post-annealing temperatures. MgSiO3 thin films showed good piezoelectric properties, because they yielded the typical butterfly-type hysteresis curves. Additionally, the substrate temperature was significant at 1% level for piezoelectric strain constant d33. Optimum generating condition was obtained as Ts= 300 °C, Ta= 650 °C and fO2= 3.0 sccm, and its piezoelectric strain constant was d33= 346.7 pm/V, which was higher than the values of the existing piezoelectric BaTiO3.
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