Abstract
A wide range energy (25, 50, 100keV) electron beam lithography system with ZrOW Schottky electron source and UHV chamber has been developed. The electron probe stability of 2.5%/hour is measured, and a beam diameter of 3nm is confirmed at 100keV beam energy. The ultimate pressure of bakeable work chamber is confirmed to reach 4×10−10Torr. With the UHV chamber and a gas jet nozzle, this system allows to perform in-situ electron beam nanolithography by combining with UHV multichamber systems.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
