Abstract
This paper describes the development of high repetitive pulsed power modulator based on IGBT stacks. The designed maximum specification of pulsed power modulator is 10 kV, 50 A, 50 kHz pulsed output for the application of PSII, DLC and sputtering system. The proposed pulsed power modulator consists of high efficiency current resonant inverter for the high voltage charging unit and IGBT stacks and related drive circuits for pulsed power output unit. Since it generates high voltage pulse from IGBT stacks without step up transformer, it shows fast pulse rising time(< 200 nsec) and higher rate of pulse repetition(up to 50 kHZ). Also when compared with MOSFET based system, it has an intrinsic capability of handling large currents for the short period at arching condition. The designed high repetitive pulsed power modulator can be used for various kinds of application which require few kilovolts, few tens of ampere pulsed power with a range of few microseconds up to 50 kHz.
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