Abstract
This paper discusses a high voltage pulsed power modulator with high reliability and fast switching speed for medical lasers. The proposed circuit can improve reliability by employing a modular structure using bypass devices. Furthermore, since the developed pulsed power modulator utilizes metal oxide silicon field effect transistors (MOSFETs) as bypass devices as well as main switches, it can achieve fast switching speed. Experimental results from a 1 kV and 300 kHz pulsed power modulator is shown to verify the proposed work.
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