Abstract
We report on the development and process control of magnetic tunnel junctions (MTJs) for magnetic random access memory (MRAM) devices. It is demonstrated that MTJs with high magnetoresistance ∼40% at 300 mV, resistance–area product (RA) ∼1–3 kΩ μm2, low intrinsic interlayer coupling (Hin) ∼2–3 Oe, and excellent bit switching characteristics can be developed and fully integrated with complementary metal–oxide–semiconductor circuitry into MRAM devices. MTJ uniformity and repeatability level suitable for mass production has been demonstrated with the advanced processing and monitoring techniques.
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