Abstract
The modern development of the nuclear industry, nuclear energy, and aerospace technology is in dire need of the development of a new generation of electronics capable of operating at elevated levels of radiation and high temperatures and in chemically active environments [...]
Highlights
Devices with the specified set of properties have not yet been produced in the world and cannot be implemented using traditional semiconductor materials (Ge, Si, CdTe, GaAs)
Significant progress has been achieved in growing pure epitaxial silicon carbide (SiC) layers with low deep-level concentrations and relatively high diffusion lengths of charge carriers
Despite the achieved successes and the beginning of industrial production of devices based on SiC in the physics and technology of this material, there are still many unsolved problems
Summary
Devices with the specified set of properties have not yet been produced in the world and cannot be implemented using traditional semiconductor materials (Ge, Si, CdTe, GaAs). Significant progress has been achieved in growing pure epitaxial SiC layers with low deep-level concentrations and relatively high diffusion lengths of charge carriers Success in obtaining such epitaxial SiC layers with a large area (more than 150 mm in diameter) and various thicknesses makes it possible to develop industrial production of a new generation of highly efficient devices based on them.
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