Abstract
We had developed an attenuated phase shift mask for DUV exposure (DUV- AttPSM) using a CrFx film as a phase shifting layer. But the durability against DUV irradiation was poor (ca. 0.8% transmittance increase after 37 kJ/cm<SUP>2</SUP>). In addition, an exposure test proved that the phase shift angle of the DUV-AttPSM was 170 degrees. We improved the durability against DUV irradiation of our DUV-AttPSM by changing the deposition conditions. The transmittance change after 37 kJ/cm<SUP>2</SUP> irradiation is reduced to 0.15%. The improved film shows acceptable durability against chemicals, and there is no problem in the mask- cleaning process. Furthermore, we evaluated the exposure properties of a DUV-AttPSM with a phase-shift angle of ca. 180 degrees, and the focus latitude for a 0.25 micrometers hole array turns out to be 2.5 micrometers , being 5- times as large as that of a binary mask. In addition, the consecutive deposition stability of the blank was tested, and the DUV-AttPSM proved to be adaptable to mass production.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
