Abstract
Recent developed high-permitivity (high-k) materials provide another opportunity to germanium (Ge) as a channel material in metal-oxide-semiconductor field-effect transistor applications. In this paper, developments of high-k/Ge gate stack have been reviewed. Various interface engineering processes including surface passivation techniques and post-gate treatments have been discussed. Physical and electrical characterizations have been made to evaluate the performance of interface engineered Ge MOS devices.
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