Abstract
The common memory technologies used in the traditional memory hierarchy, are increasingly constrained by fundamental technology limits. The increasing leakage power for SRAM and refresh dynamic power for DRAM has posed challenges to circuit and architecture designers. Emerging memory technologies such as spin transfer torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (RRAM) are being explored as potential alternatives to existing memories in future computing systems. Especially, due to the excellent compatibility with CMOS process and ease of 3D integration, RRAM provides a promising potential for embedded and standalone application. In this talk, current status of RRAM technology will be discussed, including switching mechanism, array architecture, 3D integration, target applications, challenges and future trends. A new era of convolutional computer architectures could be expected after the mature of emerging new NVM technologies.
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