Abstract
Non-volatile resistance change under electric stimulation in many metal-oxides is a promising path to next generation memory devices. However, the underlying mechanisms are still not fully understood. In situ transmission electron microscopy experiments provide a powerful tool to elucidate these mechanisms. In this contribution, we demonstrate a TEM lamella geometry for in situ biasing with two fixed electrode contacts ensuring low and stable contact resistances. We use Pr1-xCaxMnO3-δ sandwiched by Pt electrodes as model system. The evolution of manganese valence state during electric stimulation in different environments is mapped by means of electron energy loss spectroscopy with high spatial resolution in STEM. Correlation of Mn valence with local oxygen content is found. In addition to electrically driven switching, beam-induced redox reactions in oxygen environment are observed. This effect might be restricted to thin lamellae. In general, our results support that bulk oxygen electromigration is the relevant mechanism for non-volatile resistive switching in PCMO.
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