Deuterium accumulation in tungsten under low-energy high-flux plasma exposure

Abstract

The accumulation of deuterium implanted in tungsten is simulated within the framework of kinetic diffusion theory. The influence of the tungsten microstructure (dislocation density and impurity concentration) on the process of deuterium capture and accumulation is considered. It is established that, under the chosen irradiation conditions, deuterium accumulation in the near-surface region is determined by capture at defects formed during implantation. The deuterium concentration gradient, together with the material microstructure, determines its accumulation in tungsten. Variation in the dislocation density and impurity concentration does not affect the simulation results, which is, first, related to the fact that the model used does not contain alternative mechanisms for the formation and growth of vacancy clusters under the subthreshold irradiation mode. The simulation results are compared with experimental data, and ways of improving the model are discussed in order to explain the deuterium-saturation effect for high fluences (more than 1023 m−2).