Abstract
In this work, we develop and study single-photon sources based on InGaAs quantum dots (QDs) emitting in the telecom O-band. Quantum devices are fabricated using in situ electron beam lithography in combination with thermocompression bonding to realize a backside gold mirror. Our structures are based on InGaAs/GaAs heterostructures, where the QD emission is redshifted toward the telecom O-band at 1.3 μm via a strain-reducing layer. QDs pre-selected by cathodoluminescence mapping are embedded into mesa structures with a backside gold mirror for enhanced photon-extraction efficiency. Photon-autocorrelation measurements under pulsed non-resonant wetting-layer excitation are performed at temperatures up to 40 K, showing pure single-photon emission, which makes the devices compatible with stand-alone operation using Stirling cryocoolers. Using pulsed p-shell excitation, we realize single-photon emission with a high multi-photon suppression of g(2)(0) = 0.027 ± 0.005, an as-measured two-photon interference visibility of (12 ± 4)%, a post-selected visibility of (96 ± 10)%, and an associated coherence time of (212 ± 25) ps. Moreover, the structures show an extraction efficiency of ∼5%, which is comparable to values expected from numeric simulations of this photonic structure. Further improvements of our devices will enable implementations of quantum communication via optical fibers.
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