Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper‐Bound to 99.85% by Ion–Solid Interactions (Adv. Mater. 3/2022)

Abstract

Near-Surface Doping In article number 2103235, David N. Jamieson and co-workers report that single-crystal silicon can be configured with arrays of single, near-surface, dopant atoms using on-chip electrodes and low-noise charge-sensitive electronics to register single-ion implants. Suitable for integration with a nanostencil scanner to localize the implants, the system makes use of the signal of electron–hole pairs generated as the ions dissipate their kinetic energy in the crystal. The system can be part of an engineering strategy for high-confidence fabrication of large-scale donor arrays to exploit donor spin ensembles in silicon devices.