Abstract
Four-State Nonvolatile Memories In article number 2208244, Deyang Chen and co-workers report that four-state polarization states in multiferroic BiFeO3 thin films are deterministically achieved and reversibly controlled through precisely selecting 71° ferroelastic and 180° ferroelectric switching paths. This study provides the platform for the realization of multi-state memories and magnetoelectric coupling based devices.
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