Abstract
The atomic structure of Zn for the Zn-doped β-Ga2O3 film formed through mist chemical vapor deposition was investigated via X-ray absorption spectroscopy using a high-sensitivity detector and spectra simulations. The measured and simulated spectra agree, revealing that Zn atoms are located at substitutional Ga sites and at both tetrahedral and octahedral sites, not one of the two.
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