Abstract
A simple technique is described that allows the determination of surface-state-induced transfer noise from transfer-loss measurements in surface-channel charge-coupled devices (SCCD's). Transfer noise has been measured on two-phase overlapping polysilicon electrode long-channel SCCD's at temperatures between 77 and 325 K in a frequency range of 1 KHz to 1 MHz. The validity of the technique is supported by the close agreement of the experimentally obtained data and the theoretically calculated values based upon independent measurements of the surface-state density and capture cross section in SCCD's.
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