Abstract
Various schemes for the determination of unintentionally introduced impurities in high-purity GaAs are discussed. The identification of acceptor species is accomplished by measuring the 1s/sub 3/2/-2s/sub 3/2/ splitting of hydrogen-like acceptors. This measurement is made possible by an excited final state relaxation process which is manifested in the luminescence spectrum by a red-shifted replica of the acceptor bound exciton doublet. A technique is described for enhancing this process with respect to the free to bound transitions which make up the background. It involves selectively exciting only those initial states which can give rise to the desired process. Laser excitation wavelength and power density affect the emission intensities of various bound exciton peaks. The implications of these results for quantitative determinations of acceptors are discussed. 20 references, 8 figures.
Published Version
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