Determination of trace amounts of Ga(III) by adsorptive stripping voltammetry with in situ plated bismuth film electrode

Abstract

The determination of trace gallium using adsorptive stripping voltammetry at an in situ plated bismuth film electrode was described. The method was based on simultaneous film formation and the Ga(III)–cupferron complex preconcentration at −0.65V and its cathodic stripping during the potential scan. The effect of Bi(III) and cupferron concentration, the influence of deposition potential and time, and the scan rate on the determination of Ga(III) were studied. A linear response in the concentration range of 3×10−10 to 3×10−7molL−1 (r=0.998) was obtained with detection limit of 1.05×10−10molL−1 using accumulation time of 180s. Finally, the bismuth film electrode was successfully applied for the determination of Ga(III) in certified reference material seawater NASS-5 with satisfactory results.