Abstract
We present the X-ray reflectometry technique as a unique tool for the assessment of individual layer thicknesses inside complicated structure stacking of semi-conductors heterostructures. In particular, the use of an inverse fast Fourier transform applied to the reflectivity curve allows the fast determination of the layer thicknesses and the use of a simulation allows the determination of both interfacial roughnesses and individual layer thicknesses. We demonstrate the capability of this method by reporting X-ray reflectometry study on a novel AlGaAs-based waveguide with complicated structure stacking and on InAs/AlSb-based superlattices. Typical layer thicknesses from 0.5 to 500nm were successfully investigated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
