Abstract

Both x-ray reflectometry and high-resolution x-ray diffractometry techniques are used for the assessment of individual layer thicknesses and interfacial profiles inside complicated heterostructures, such as semi-conductor multilayers. In particular, the use of Fourier transform-based numerical treatments applied to both the reflectivity curves and the high-resolution diffraction profiles allows a fast and precise determination of the individual layer thicknesses. Moreover, we show the potentiality of this method by reporting x-ray reflectometry and diffractometry studies on waveguides structures and superlattices. Typical layer thicknesses from 0.5 nm to more than 1 μm are accessible with these methods. We show the complementarity of both x-ray reflectometry and high-resolution diffraction techniques. Finally, the reliability of using a simulation software for the assessment of complicated interfacial roughness, such as segregation profiles, is reported.

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