Abstract
Both x-ray reflectometry and high-resolution x-ray diffractometry techniques are used for the assessment of individual layer thicknesses and interfacial profiles inside complicated heterostructures, such as semi-conductor multilayers. In particular, the use of Fourier transform-based numerical treatments applied to both the reflectivity curves and the high-resolution diffraction profiles allows a fast and precise determination of the individual layer thicknesses. Moreover, we show the potentiality of this method by reporting x-ray reflectometry and diffractometry studies on waveguides structures and superlattices. Typical layer thicknesses from 0.5 nm to more than 1 μm are accessible with these methods. We show the complementarity of both x-ray reflectometry and high-resolution diffraction techniques. Finally, the reliability of using a simulation software for the assessment of complicated interfacial roughness, such as segregation profiles, is reported.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.