Abstract
Infrared transmission spectra of the longitudinal optical (LO) mode (1250 cm-1) of thin thermal oxide layers (10–100 Å, formed at 800–950° C in O2 or O2 diluted with N2) on silicon wafers were measured at p-polarized 73.7° incidence, based on the Berreman effect. An excellent linear correlation was found between the LO absorbance and the oxide thickness, which exhibits no dependence upon the oxygen content in silicon.
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