Determination of the work function of the Co thin films by using γ-FIB system

Abstract

Summary form only given, as follows. Summary form only given. The physical properties of the metal-semiconductor heterointerfaces have received much attention for many years because of a desire to develop fabrication technology for high-speed electron devices. Recently, the growth of magnetic thin films on compound semiconductor substrates has been particularly attractive from both the scientific and the technological points of view in connection with spintronics. Investigations of the secondary electron emission coefficient /spl gamma/ and the work function of Co thin films grown on GaAs substrate are very important for understanding the electronic properties of the Co/GaAs heterostructures. Co thin films on the GaAs(100) substrates were grown at room temperature by using the ion beam-assisted deposition. The secondary electron emission coefficient /spl gamma/ measurements were carried out using a home made /spl gamma/-Focused Ion Beam system, and the He, Ne, Ar, Xe gases used as ion sources. The work function of the Co thin films can be determined from the dependences of the /spl gamma/ values on the type of incident ion and on the acceleration voltage by using Auger neutralization theory. These results provide important information on the electronic properties of Co thin films grown on GaAs(100) substrates at room temperature.