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Abstract
The refractive index of the quarternary material In 0.53Al 0.11Ga 0.36As/InP is measured for the first time by spectroscopic ellipsometry in the wavelength range from 280 to 1900 nm. In previous papers we found out that between InP and MBE-grown In 0.52Al 0.48As or In 0.53Ga 0.47As an interface layer exists, due to the interaction of arsenic with InP in the preheat phase of the MBE growth. Therefore we grew three layers of In 0.53Al 0.11Ga 0.36As on InP with different thicknesses to determine the refractive indices and exact values of the thicknesses.
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