Abstract
The refractive indices of In 0.53Al 0.40Ga 0.36As layers on InP are measured for the first time by spectroscopic ellipsometry in the wavelength range from 280 to 1900 nm. In previous papers we found out that between InP and MBE-grown In 0.52Al 0.48As and In 0.53Ga 0.47As layers an interface layer exists, due to the interaction of arsenic with InP in the preheat phase of the MBE growth. We investigated three layers of each composition with different thicknesses for the determination of the refractive indices and the exact values of the thicknesses.
Published Version
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