Abstract
Depth profiles of boron implanted at energies from 30 up to 200 keV into Si and SiO2, are analyzed using the 10B(n, α) 7Li nuclear reaction. With an iterative deconvolution technique the measured α-particle spectra are corrected for broadenings caused mainly by the finite energy resolution of the measuring device. The higher central moments of the implanted profiles are determined and compared with various theoretical predictions. The measured range stragglings ΔRp agree well with predicted ones, the deviations being mostly less than 10%. An agreement between measured and predicted profile skewnesses within 20% is found for boron implanted into SiO2. In the case of the boron profiles in bare silicon, however, the measured skewnesses are by 30 to 40% smaller than those predicted. The values of kurtosis derived from the measured data compare well with those calculated by the Monte-Carlo method for the boron implanted into silicon. [Russian Text Ignored]
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
