Abstract
We have simulated grain growth process of an Al ultra thin film by the phase field method. As the model of the calculation, we used the poly crystal model of Kobayashi-Warren in which the phase field and the orientation field are considered. The section of the thin film was divided into 2-dimensional meshes and the time developing equations of the phase field and the orientation field were solved numerically. The parameters for the present calculation have been determined to fit to the results of the grain growth experiment of Al thin film. The relaxation time of grain rotation, only the phase field parameter assumed to be temperature dependent, was determined from the time evolution of averaged grain size in the annealed Al thin film. Isothermal annealing process at various temperatures has been examined using the tuned phase field parameters and the temperature dependence of grain growth was clearly observed.
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