Abstract
This report focuses on studying and fabricating In-doped SnO2 (TIO) films following various depositing and annealing temperatures. TIO films were deposited on quartz glass substrates using a direct current (DC) magnetron sputtering method. These preferred SnO2 (101) and (211) reflections became dominant due to the substitution of Sn by In in the SnO2 host lattice. The valence state of In existing in TIO film was recorded using X-ray photoelectron spectroscopy (XPS). The p-type conductive property was found at a minimum temperature of 400 °C, and the best conductivity was achieved at the optimum annealing temperature of 550 °C for 2 h with resistivity, hole concentration, and mobility of 0.68 Ω cm, 1.13 × 1018 cm−3, and 8.13 cm2V−1s−1, respectively. Furthermore, the average transmittance of the films was above 85%. Grain shape and size were observed by scanning electron microscopy (SEM). The existence of the In3+ state in the band gap was identified using photoluminescence spectra at room temperature. The rectified characterisation revealed the behaviour of a p-TIO/n-Si heterojunction diode.
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