Abstract
To determine the nucleation region location of Si nano-crystal grains, pulsed laser ablation of Si target is performed in Ar gas of 10 Pa at room temperature with laser fluence of 4 J/cm2, the substrates are located horizontal under ablation spot with different vertical distance. Characteristics of deposited grains are described by scanning electron microscopy, Raman scattering and X-ray diffraction spectra, the results indicate that deposition position on substrates in a certain range is relative to target surface, which changes according to different vertical distance of substrates to ablation spot. Grain size increased at first and then decreased with addition of lateral distances to target in the range, but the integral distribution rule was independent of position of substrates. Combining with hydrodynamics model, nucleation division model, thermokinetic equation and flat parabolic motion, spatial nucleation region location of grains is obtained through numerical calculations, which is 2.7 mm-43.2 mm to target surface along the plume axis.
Highlights
The films that contain Si nano-crystal grains are used widely in the area of micro-electronics, photo-electricity integration, solar cell [1,2,3] and biomedicine et al following with the rapid progress of preparation technology [4,5], but the efficiency and property of many apparatus are limited for the size and uniformity of grains
To determine the nucleation region location of Si nano-crystal grains, pulsed laser ablation of Si target is performed in Ar gas of 10 Pa at room temperature with laser fluence of 4 J/cm2, the substrates are located horizontal under ablation spot with different vertical distance
Characteristics of deposited grains are described by scanning electron microscopy, Raman scattering and X-ray diffraction spectra, the results indicate that deposition position on substrates in a certain range is relative to target surface, which changes according to different vertical distance of substrates to ablation spot
Summary
The films that contain Si nano-crystal grains are used widely in the area of micro-electronics, photo-electricity integration, solar cell [1,2,3] and biomedicine et al following with the rapid progress of preparation technology [4,5], but the efficiency and property of many apparatus are limited for the size and uniformity of grains. These problems will be resolved successfully through preparing ideal size of grains, but the dynamics of nucleation and growth of grains is indistinct for us up to date. Determination of the Nucleation Region Location of Si Nano-Crystal Grains Prepared by Pulsed
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