Preparation of surface controlled silicon nanocrystallites by pulsed laser ablation

Abstract

We attempted to prepare surface controlled silicon nanocrystallites by two methods. One method is two step dry process based on plasma surface treatment and the other approach is simple one step process based on reactive pulsed laser ablation. The nanoparticles prepared in hydrogen gas are not an alloy of Si and hydrogen but Si nanocrystal covered by hydrogen or hydrogenated Si. We found that the pulsed laser ablation of Si target in hydrogen background gas is a simple one step dry process to prepare surface passivated Si nanocrystal.