Determination of the diffusing species and mechanism of diffusion during CrSi2 formation, using 31Si as a marker

Abstract

Both the diffusing atomic species and its mechanism of diffusion have been directly determined during metal-silicon interaction to form CrSi2. By using radioactive 31Si (half-life = 2.62h) as a marker, it has been shown that silicon is the diffusing species during CrSi2 formation and that it diffuses by a substitutional (vacancy) mechanism. Complete intermixing of radioactive 31Si and nonradioactive silicon was found to take place throughout the silicide layer at its formation temperature, due to high substitutional (vacancy) self-diffusion of silicon in CrSi2.