Abstract

A time-resolved picosecond pump-infrared-probe technique was used to measure the X6→X7 absorption spectrum in an intrinsic GaAs crystal. From the long-wavelength onset of the induced X6→X7 absorption spectrum, the energy gap between the minima of the X6 and X7 bands was directly determined to be 0.345±0.017 eV. By fitting the experimental data, the density of states effective mass for the X7 band was found to be 0.48±0.06m0.

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