Abstract
The presence of an electron rich inversion layer in p-type crystalline silicon (c-Si) at the interface with n-type hydrogenated amorphous silicon (a-Si:H) is experimentally demonstrated from the coplanar conductance of (n) a-Si:H∕(p) c-Si structures, which is shown to be very sensitive to the band mismatch between the two semiconductors. The temperature dependence of the corresponding sheet electron density allows to determine with a very good precision the conduction band offset ΔEC between a-Si:H and c-Si:ΔEC=0.15±0.04eV.
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