Abstract
The field effect model for potential-induced degradation of p-type crystalline silicon solar cells postulates an inversion of the emitter surface. The electrical properties of the inversion layer was evaluated based on theoretical considerations and the effect of the inversion layer on the solar cell device was modeled. Finally, our theoretical model was compared to experimental data. As a result, the inversion layer alone cannot explain the observed shunting of the solar cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
