Abstract
A quantitative analysis of IR ellipsometry spectra of borophosphosilicate glass (BPSG) thin films deposited on silicon wafers is presented. The film thickness is determined with a standard deviation of 5.8 nm using a fitting procedure based on only two free parameters. A simple linear analysis of the dependence of the ellipsometric measurements upon film composition provides standard deviations of 0.04 and 0.12 wt % on boron and phosphorus content, respectively.
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